| PART |
Description |
Maker |
| BGU6101 |
Wideband silicon low-noise amplifier MMIC
|
NXP Semiconductors
|
| BGU7045 |
1 GHz wideband low-noise amplifier with bypass
|
NXP Semiconductors
|
| EL212507 EL2125CS EL2125CSZ EL2125CSZ-T13 EL2125CW |
Ultra-Low Noise, Low Power, Wideband Amplifier
|
http://
Intersil Corporation
|
| TGA4830-EPU |
Wideband Low Noise Amplifier 0 MHz - 45000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
|
| BGU7003 |
Wideband silicon germanium low noise amplifier MMIC
|
NXP SEMICONDUCTORS
|
| HMC-ALH102 |
GaAs HEMT MMIC WIDEBAND LOW NOISE AMPLIFIER, 2 - 20 GHz
|
Hittite Microwave Corporation
|
| HFA3-0002-5 HFA3-0002-9 HFA9P0002-5 HFA9P0002-9 HF |
Low Noise Wideband Operational Amplifier OP-AMP, 2000 uV OFFSET-MAX, 1000 MHz BAND WIDTH, CDIP8
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| HA2-5137883 HA7-5137883 HA-5137_883 HA4-5137883 FN |
DIODE SCHOTTKY DUAL COMMON-CATHODE 30V 350mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-23 3K/REEL
60MHz/ Ultra Low Noise/ Precision Operational Amplifier
60MHz, Ultra Low Noise, Precision Operational Amplifier
60MHz Ultra Low Noise Precision Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| 2SK117 E001317 |
From old datasheet system
LOW NOISE AUDIO AMPLIFIER APPLICATONS
N CHANNEL JUNCTIONS TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
